dss4240y document number: ds31682 rev. 2 - 2 1 of 5 www.diodes.com march 2011 ? diodes incorporated advance information dss4240y 40v low v ce(sat) npn surface mount transistor features ? epitaxial planar die construction ? ideal for low power amplification and switching ? complementary pnp type available (dss5240y) ? ultra small surface mount package ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free "green" device (note 2) ? esd rating: 400v-mm, 8kv-hbm ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot363 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin annealed over copper plated alloy 42 leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel dss4240y-7 zn8 7 8mm 3,000 notes: 1. no purposefully added lead. 2. diode?s inc.?s ?green? policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2010 2011 2012 2013 2014 2015 code x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view top view device schematic top view pin out configuration zn8 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) zn8 ym sot363 c c b c c e c b e
dss4240y document number: ds31682 rev. 2 - 2 2 of 5 www.diodes.com march 2011 ? diodes incorporated advance information dss4240y maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5 v collector current - continuous i c 2 a peak pulse collector current i cm 3 a peak base current i bm 0.3 a thermal characteristics characteristic symbol value unit power dissipation (note 4) @ t a = 25 c p d 625 mw thermal resistance, junction to ambient (note 4) @ t a = 25 c r ja 200 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 4. device mounted on fr-4 pcb, with minimum recommended pad layout. 0 0.2 0.4 0.6 0.8 050100150200 t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature (note 3) p , p o we r dissi p a t i o n (w) d rc/w ja = 200 0.1 1 10 100 v , collector emitter voltage (v) fig. 2 safe operating area ce 0.001 0.01 0.1 1 100 i, c o lle c t o r c u r r e n t (a) c 10 pw = 100s 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 3 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 180c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1
dss4240y document number: ds31682 rev. 2 - 2 3 of 5 www.diodes.com march 2011 ? diodes incorporated advance information dss4240y electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 40 150 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage (note 5) bv ceo 40 55 ? v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 5 8.5 ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? ? ? ? 100 50 na a v cb = 30v, i e = 0 v cb = 30v, i e = 0, t a = 150c emitter cutoff current i ebo ? ? 100 na v eb = 4v, i c = 0 dc current gain (note 5) h fe 350 300 300 150 ? ? ? ? ? ? ? ? ? v ce = 2v, i c = 100ma v ce = 2v, i c = 500ma v ce = 2v, i c = 1a v ce = 2v, i c = 2a collector-emitter saturation voltage (note 5) v ce(sat) ? ? ? ? ? 45 52 100 105 190 70 100 180 180 320 mv i c = 100ma, i b = 1ma i c = 500ma, i b = 50ma i c = 750ma, i b = 15ma i c = 1a, i b = 50ma i c = 2a, i b = 200ma collector-emitter saturation resistance r ce ( sat ) ? 105 200 m ? i c = 500ma, i b = 50ma base-emitter saturation voltage v be ( sat ) ? ? 1.1 v i c = 2a, i b = 200ma base-emitter turn on voltage v be ( on ) ? ? 0.75 v v ce = 2v, i c = 100ma output capacitance c obo ? ? 20 pf v cb = 10v, f = 1.0mhz current gain-bandwidth product f t 100 250 ? mhz v ce = 10v, i c = 50ma, f = 100mhz turn-on time t on ? 64 ? ns v cc = 10v i c = 1a, i b1 = -i b2 = 50ma delay time t d ? 20 ? ns rise time t r ? 44 ? ns turn-off time t off ? 315 ? ns storage time t s ? 275 ? ns fall time t f ? 40 ? ns notes: 5. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 0 0.4 0.8 1.2 1.6 2.0 2.4 012345678910 v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage i, c o lle c t o r c u r r e n t (a) c i = 1ma b i = 2ma b i = 3ma b i = 4ma b i = 5ma b 0 200 400 600 800 1,000 1,200 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 5 typical dc current gain vs. collector current h, d c c u r r en t g ain fe t = -55c a v = -2v ce t = 25c a t = 85c a t = 125c a t = 150c a
dss4240y document number: ds31682 rev. 2 - 2 4 of 5 www.diodes.com march 2011 ? diodes incorporated advance information dss4240y 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 6 typical collector-emitter saturation voltage vs. collector current v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 10 cb t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.0001 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 7 typical base-emitter turn-on voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) 0 t = -55c a v = 2v ce t = 25c a t = 150c a t = 125c a t = 85c a 0.0001 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 8 typical base-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = -55c a i = 10 cb /i t = 25c a t = 150c a t = 125c a t = 85c a 0 30 60 90 120 150 180 0 5 10 15 20 25 30 35 40 v , reverse voltage (v) r fig. 9 typical capacitance characteristics c a p a c i t an c e (pf) c ibo c obo f = 1mhz package outline dimensions sot363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 typ f 0.40 0.45 h 1.80 2.20 j 0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.22 0 8 all dimensions in mm a m j l d b c h k f
dss4240y document number: ds31682 rev. 2 - 2 5 of 5 www.diodes.com march 2011 ? diodes incorporated advance information dss4240y suggested pad layout dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 important notice diodes incorporated makes no warranty of any kind, expr ess or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, im provements, corrections or ot her changes without further notice to this doc ument and any product described herein. diodes incorporated does not assume any liabi lity arising out of the application or use of this document or any produc t described herein; neither does diodes incorporated convey any lic ense under its patent or trademark rights, nor the rights of others. any customer or user of this docum ent or products described herein i n such applications shall assume all risks of such use and will agree to hold diodes incorporated and a ll the companies whose products are represented on diodes incorporated w ebsite, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customer s shall indemnify and hold diodes incorporated and its representatives harmless against all claims, dam ages, expenses, and attorney fee s arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or mo re united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to resu lt in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety-related requirements concerning their products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of di odes incorporated products in such safety- critical, life support devices or systems. copyright ? 2011, diodes incorporated www.diodes.com x z y c1 c2 c2 g
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